Projects per year
Personal profile
Personal profile
Dr. Jie Zhang is presently an assistant professor in the School of CHIPS, Taicang campus, Xian Jiaotong-liverpool University.Jie Zhang received her BSc degree from Jilin University in 2014. Then, she completed her PhD degree in 2019 from Peking University.In 2019-2023, Jie Zhang had a four-year postdoctoral experience in Hong Kong University of Science and Technology and Fudan University. Her main research interests include wide-bandgap semiconductor materials and devices.
Research interests
Wide-bandgap semiconductor materials
Semiconductor devices
Experience
Assistant Professor, Xian Jiaotong-Liverpool University - 2023 to present
Teaching
MES205TC, Digital Electronics II
Awards and honours
2021 Super postdoctor in Fudan University
2018 National scholarship in Peking University
Education/Academic qualification
Post-Doc., Academy for Engineering & Technology, Fudan University, -2023
Post-Doc., Department of Electronic & Computer Engineering , The Hong Kong University of Science and Technology, -2021
Ph.D., Peking University , - 2019
B.Sc., Jilin University,-2014
Person Types
- Staff
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Collaborations and top research areas from the last five years
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Projects
- 3 Active
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Gallium nitride photoelectric integrated chips for information processing and transmitting
1/01/25 → 31/12/27
Project: Governmental Research Project
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Suzhou SIP Extended-Energy Big Data and Intelligent Computing High-Level Innovation (Research) Platform
Ma, J., Xue, F., Lim, E. G., Xu, Z., Xu, D., Xiao, J., Chen, M., Yue, Y., Man, K. L., Yao, L., Jin, X., Liu, D., Ji, C., Pan, Y., Zhu, X., Xiang, N., Zhang, H., Chen, X., Xu, X., Han, B., Qi, J., Fang, L., Zhang, J., Zhao, Y., Dong, Y., Cai, J., Wang, Y., Lin, Y. & Cao, S.
1/10/24 → 30/09/26
Project: Governmental Research Project
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Exploring The Alignment of Realistic Applications of Project-Based Cases with Industry Needs and Expectations
Lu, Q., Vahed, A., Zhang, J., Chen, W. & Hajjaj, S. S. H.
1/03/24 → 31/12/25
Project: Internal Research Project
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Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress
Liang, Y., Duan, J., Zhang, P., Low, K. L., Zhang, J. & Liu, W., Sept 2024, In: Nanomaterials. 14, 18, 1529.Research output: Contribution to journal › Article › peer-review
Open Access -
Electronic properties of ZrO2 films fabricated via atomic layer deposition on 4H-SiC and Si substrates
Wang, X. R., Zeng, Y. X., Zhang, J., Huang, W., Ma, H. P. & Zhang, Q. C., 1 Jan 2024, In: Materials Research Express. 11, 1, 015902.Research output: Contribution to journal › Article › peer-review
Open Access -
Band alignment of TiO2/SiC and TiO2/Si heterojunction interface grown by atomic layer deposition
Zeng, Y. X., Wang, X. R., Zhang, J., Huang, W., Yang, L., Ma, H. P. & Zhang, Q. C., Jul 2023, In: Semiconductor Science and Technology. 38, 7, 075004.Research output: Contribution to journal › Article › peer-review
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Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates
Zhang, J., Yang, X., Ma, H., Zhang, Q. & Shen, B., 1 Feb 2023, In: AIP Advances. 13, 2, 025250.Research output: Contribution to journal › Article › peer-review
Open Access -
Electrical characterization of HfO2/4H-SiC and HfO2/Si MOS structures
Wang, X. R., Zhang, J., Ma, H. P. & Zhang, Q. C., 2023, Proceedings - 2022 19th China International Forum on Solid State Lighting and 2022 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2022. Institute of Electrical and Electronics Engineers Inc., p. 34-37 4 p. (Proceedings - 2022 19th China International Forum on Solid State Lighting and 2022 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2022).Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review